| 发明名称 |
ADVANCED CMOS USING SUPER STEEP RETROGRADE WELLS |
| 摘要 |
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
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| 申请公布号 |
US2009130805(A1) |
申请公布日期 |
2009.05.21 |
| 申请号 |
US20090356371 |
申请日期 |
2009.01.20 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BABCOCK JEFFREY A.;PINTO ANGELO;BALSTER SCOTT;HAEUSLER ALFRED;HOWARD GREGORY E. |
| 分类号 |
H01L21/336;H01L21/265;H01L21/8238;H01L29/10;H01L29/36;H01L29/786 |
主分类号 |
H01L21/336 |
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