| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability for a withstand voltage, leakage characteristics and the like by providing a structure which prevents stress generated owing to metal wiring from directly acting on a trench, as to the semiconductor device having a trench gate. SOLUTION: This semiconductor device having the trench gate includes a semiconductor substrate equipped with a semiconductor layer having desired dopant concentration, a trench gate formed by embedding a conductor layer in a plurality of stripe-shaped trenches formed in the semiconductor layer through a gate oxide film, an insulating film covering the surface of the semiconductor layer, a source electrode formed in a source region and a gate peripheral wiring connected to the trench gate in the peripheral fringe part of the trench gate in the insulating film, a gate electrode formed on the same surface as that of the source electrode and at a position separated from the source electrode, and connected to the gate peripheral wiring, and a drain electrode formed on the backside portion, and the trench gate 7(4) is formed with the corner part C of a source contact opening part 3 avoided. COPYRIGHT: (C)2009,JPO&INPIT |
