| 摘要 |
A microelectronic device comprising one or several metallic levels provided with one or several superposed metallic interconnecting levels and at least one test structure: at least one metallic zone formed in at least one insulating zone, the metallic zone comprising: at least one first metallic portion through which a current will be injected and at least one second metallic portion through which said current will be extracted, at least one third metallic portion that will act as a first voltage measurement point, and at least one fourth metallic portion that will act as a second measurement point for said voltage, a plurality of insulating islands incorporated in said metallic zone, said structure also comprising: a plurality of metallic islands incorporated in the insulating zone and distributed around said metallic zone.
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