| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fine patterning method for a semiconductor element by which a problem that critical dimension (CD) becomes poor by superimposition is eliminated to form a pattern finer than resolution of an exposure process. <P>SOLUTION: The fine patterning method of the semiconductor element comprises steps of: forming a first photoresist film and a second photoresist film with different exposure types on a semiconductor substrate on which a film to be etched is formed; performing the exposure process to the second photoresist film and the first photoresist film; developing the second photoresist film to form a second photoresist pattern; etching the first photoresist film to form a first photoresist pattern in an etching process using the second photoresist pattern as an etching mask; developing the first photoresist pattern to form an auxiliary pattern; and etching the film to be etched, using the auxiliary pattern. <P>COPYRIGHT: (C)2009,JPO&INPIT |
