发明名称 |
PHASE-CHANGEABLE MEMORY DEVICES |
摘要 |
<p>A non-volatile memory array includes an array of phase-changeable memory elements that are electrically insulated from each other by at least a first electrically insulating region extending between the array of phase-changeable memory elements. The first electrically insulating region includes a plurality of voids therein. Each of these voids extends between a corresponding pair of phase-changeable memory cells in the non-volatile memory array and, collectively, the voids form an array of voids in the first electrically insulating region.</p> |
申请公布号 |
KR20090050302(A) |
申请公布日期 |
2009.05.20 |
申请号 |
KR20070116666 |
申请日期 |
2007.11.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYOO, KYUNG CHANG;KO, JONG WOO;SONG, YOON JONG |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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