NON-VOLATILE MEMORY DEVICES AND METHDOS OF FORMING THE SAME
摘要
<p>In one embodiment, a semiconductor memory device includes a substrate having first and second active regions. The first active region includes a first source and drain regions and the second active region includes a second source and drain regions. A first interlayer dielectric is located over the substrate. A first conductive structure extends through the first interlayer dielectric. A first bit line is on the first interlayer dielectric. A second interlayer dielectric is on the first interlayer dielectric. A contact hole extends through the second and first interlayer dielectrics. The device includes a second conductive structure within the contact hole and extending through the first and second interlayer dielectrics. A second bit line is on the second interlayer dielectric. A width of the contact hole at a bottom of the second interlayer dielectric is less than or substantially equal to a width at a top of the second interlayer dielectric.</p>
申请公布号
KR20090050775(A)
申请公布日期
2009.05.20
申请号
KR20070117390
申请日期
2007.11.16
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SEL, JONG SUN;CHOI, JUNG DAL;CHUNG, JU HYUCK;LEE, CHOONG HO;CHOI, DONG UK;KANG, HEE SOO