发明名称 Magnetic memory
摘要 To provide a magnetic memory capable of reducing the amount of write current, even when the element size is 0.7 mum or less. Each of storage areas has a transistor for read/write control, which is connected electrically to either one of the fixed layer and the free layer of each magneto-resistance effect element, a wiring that is electrically connected to the other one of the fixed layer and the free layer of each magneto-resistance effect element, and a magnetic yoke that surrounds the wiring and provides a magnetic field to the free layer, and the number of the transistors within each storage area is one.
申请公布号 US7535757(B2) 申请公布日期 2009.05.19
申请号 US20070905741 申请日期 2007.10.03
申请人 TDK CORPORATION 发明人 KOGA KEIJI
分类号 G11C11/14 主分类号 G11C11/14
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