| 摘要 |
Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations of surface states, passivation, cleaning and/or etching of the surface, thereby providing an improved surface to the semiconductor material. Modifications of surface states include reduction or elimination of an electrically active state of the surface, wherein, at the atomic level, the surface binding characteristics are changed. Passivation includes the termination of dangling bonds on the surface of the semiconductor material.
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