发明名称 |
Methods of forming semiconductor devices having multilayer isolation structures |
摘要 |
A semiconductor device includes a first structure having a recess having a bottom and opposing side surfaces, and a second structure conformally disposed on the bottom and side surfaces of the recess. The second structure includes a multilayer having two layers having a thickness substantially smaller than a width of the recess. Methods of manufacturing a semiconductor device include providing a first structure having a recess in a deposition chamber and flowing first and second reactants over the first structure for a first period at first and second flow rates. Then, the flow rates of the first second reactants to the first structure are substantially reduced for a pause period. The first and second reactants are then flowed over the first structure for a second period at third and fourth flow rates. The deposition and pause steps may be repeated until a multilayer having a desired thickness is formed.
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申请公布号 |
US7534698(B2) |
申请公布日期 |
2009.05.19 |
申请号 |
US20050209879 |
申请日期 |
2005.08.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HONG-GUN;HONG EUNKEE;NA KYU-TAE |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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地址 |
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