发明名称 |
Fusible link in an integrated semiconductor circuit and process for producing the fusible link |
摘要 |
A fusible link in an integrated semiconductor circuit and a process for producing the fusible link contemplate the disposition of a fusible link, which is constructed with a cross-sectional constriction as a desired fusing point for its conductor track, in a void. A surface of the void and/or a bare conductor track can be covered with a protection layer, to prevent corrosion. The advantages of such a fusible link are a lower ignition energy and increased reliability. The fusible link may be used as a memory element of a PROM.
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申请公布号 |
US6080649(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19970780492 |
申请日期 |
1997.01.08 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
WERNER, WOLFGANG;MUELLER, KARLHEINZ;POEHLE, HOLGER |
分类号 |
H01L21/82;H01L23/525;H01L23/58;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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