发明名称 Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same
摘要 The semiconductor memory device includes a memory layer having a plurality of memory cells for storing data, and at least one bit registering layer for recording status information on whether the memory cells are defective. The memory layer may be a nanometer-scale memory device, such as a molecular memory, a carbon nanotube memory, an atomic memory, a single electron memory, or a memory fabricated by a chemical bottom-up method, etc.
申请公布号 US7535778(B2) 申请公布日期 2009.05.19
申请号 US20060365585 申请日期 2006.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON HONG-SIK;YEO IN-SEOK
分类号 G11C29/00;G11C7/00 主分类号 G11C29/00
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