发明名称 Method of manufacturing semiconductor device
摘要 The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating film with electron beams, thereby curing at least the insulating film of an organic material, are proposed.
申请公布号 US7534717(B2) 申请公布日期 2009.05.19
申请号 US20050094182 申请日期 2005.03.31
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MIYAJIMA HIDESHI;FUJITA KEIJI;MASUDA HIDEAKI;NAKATA REMPEI;SHIMADA MIYOKO
分类号 H01L21/31;H01L21/768;H01L21/20;H01L21/312;H01L21/4763 主分类号 H01L21/31
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