| 摘要 |
#CMT# #/CMT# The structure has a flat disk shaped substrate (10) provided with physical marks whose geometric configuration defines recorded information. Two dielectric layers (12, 16) and a stoichiometric indium or gallium antimonide layer (14) are superposed above the marks, where the layers (12, 16) are made of zinc sulphide and silicon dioxide compound. A transparent protection layer (18) is arranged above the superposition of the layers. The layer (14) is inserted between the layers (12, 16) and has a polycrystalline structure with a crystalline grain whose mean size ranges from 5 to 50 nanometers. #CMT# : #/CMT# The layer (14) has impurities chosen from tellurium, selenium, sulphur, arsenic, phosphorous, nitrogen, xenon, fluorine, bromine, chlorine and iodine. #CMT#USE : #/CMT# High resolution structure for optically storing information, in an optical disk on a concentric track, that is read by a blue laser reader (claimed) or a red laser reader. #CMT#ADVANTAGE : #/CMT# The structure can be manufactured in a simple manner and requires reasonable laser power for reading the information in an optical disk. The structure can be implemented in an easy manner and can be subjected to number of reading cycles without degrading a reading signal. The structure directly rests on non-linear properties of certain materials without requiring the materials from being subjected to a bubble expansion state that is difficult to be controlled. The structure permits improving efficiency of reading the marks irrespective of readers. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view of a high resolution optical information storage structure. 10 : Flat disk shaped substrate 12, 16 : Dielectric layers 14 : Stoichiometric indium or gallium antimonide layer 18 : Transparent protection layer 20 : Laser reading beam. |
