| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element formed by being divided so as to be flat in a resonator end face. SOLUTION: When an LD structure 251 is constituted on a GaN-based substrate 250, cleavage introduction grooves 252 are formed by being scribed by a diamond-edge blade from the surface of the LD structure 251. The cleavage introduction grooves 252 are formed between stripe-shaped optical waveguides 253 which are formed in parallel to the direction of [1-100]-orientation of a wafer, and the grooves 252 are formed in shapes of dashed lines in the direction of [11-20]-orientation of the wafer. COPYRIGHT: (C)2009,JPO&INPIT
|
