| 发明名称 |
INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<p>An opening (2) is formed in a protective film (1) arranged on a metal wiring (105) such as a power source wiring or a GND wiring which is required to have a low impedance, and a plated wiring (3) having a large film thickness is formed on the metal wiring (105) through the opening (2). Consequently, the wiring can have a lower impedance due to the increase in the thickness of the wiring, and a fine wiring can be formed at the same time.</p> |
| 申请公布号 |
WO2009060726(A1) |
申请公布日期 |
2009.05.14 |
| 申请号 |
WO2008JP69237 |
申请日期 |
2008.10.23 |
| 申请人 |
SHARP KABUSHIKI KAISHA;KATSUTANI, MASAFUMI;FUJINO, HIROAKI |
发明人 |
KATSUTANI, MASAFUMI;FUJINO, HIROAKI |
| 分类号 |
H01L21/3205;H01L21/60;H01L23/52 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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