| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of enabling lamination at low temperature and reducing the amount of metal contamination in an SOI film. SOLUTION: A single-crystal Si substrate 10 subjected to plasma processing for surface activation is bonded to a quartz substrate 20 at low temperature, external impact is given to it, and a silicon film is mechanically peeled from the bulk of a single-crystal silicon, thus obtaining a semiconductor substrate (SOI substrate) with a silicon film (SOI film) 12. The SOI substrate is heat-treated at a temperature of 600-1,250°C, and gettering is performed to metal impurities accidentally mixed into the interface of the SOI film and quartz substrate and into the SOI film in the process of plasma processing, or the like to the surface region of the silicon film 12. A surface layer (gettering layer) of the silicon film 12 of the SOI substrate after the heat treatment is removed as a final SOI film 13, thus obtaining the semiconductor substrate (SOI substrate). COPYRIGHT: (C)2009,JPO&INPIT
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