| 摘要 |
A semiconductor structure, device, and method of manufacturing the same are provided. The manufacturing method includes etching a substrate or the surface of a semiconductor layer formed on the substrate using a wet chemical etching method or a wet photoelectrochemical etching method to form a porous structure, and re-forming a desired semiconductor layer on the porous structure, so that reduced defect density of the re-formed semiconductor layer enables the porous structure to have improved performance and characteristics. Also, the method includes forming a porous structure on a semiconductor emission layer to increase light extraction efficiency of the semiconductor emission layer, and combining a fluorescent or light-emitting material with an internal or peripheral part of the formed porous structure to efficiently emit various colors of light.
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