| 摘要 |
PROBLEM TO BE SOLVED: To improve the feature of a resist pattern obtained by a chemical shrink method. SOLUTION: A resist film 102 is formed on a substrate 101, and the resist film 102 is selectively irradiated with exposure light 103 to be subjected to pattern exposure. The resist film 102 subjected to the pattern exposure is developed to form a first resist pattern 102b, and subsequently, a water-soluble film 105 containing a crosslinking agent to crosslink with the structural material of the resist is formed over the entire surface including the first resist pattern 102 on the substrate 101. After the contact portions of the water-soluble film 105 and the first resist pattern 102b on their side faces are crosslinked, portions of the water-soluble film 105, that is, the portions not reacted with the first resist pattern 102b are removed by using an alkali aqueous solution 106, so that a second resist pattern 107 is formed which includes the first resist pattern 102b and the water-soluble film 105 remaining on the side faces of the first resist pattern. COPYRIGHT: (C)2009,JPO&INPIT |
