发明名称 PROGRAMMABLE MEMORY BUILT-IN SELF-TEST CIRCUIT AND CLOCK SWITCHING CIRCUIT THEREOF
摘要 A programmable memory built-in self-test circuit and a clock switching circuit thereof are provided. The memory built-in self-test circuit is able to provide more self-test functions preset by a user, simplify the redundant circuit in the prior art and reduce chip area and lower the cost by means of an instruction decoder and a built-in self-test controller. The present invention also provides some peripheral control circuits of a memory. The control circuits occupies less area and enables the memory to be tested more flexibly. The present invention further provides a clock switching circuit enabling a chip to be correctly tested under different clock speeds, which benefits to advance the testability and the analyzability of the memory embedded in a chip and thereby increase fault coverage.
申请公布号 US2009125763(A1) 申请公布日期 2009.05.14
申请号 US20070939282 申请日期 2007.11.13
申请人 FARADAY TECHNOLOGY CORP. 发明人 CHANG YEONG-JAR;LIN CHUNG-FU
分类号 G11C29/08;G06F11/26 主分类号 G11C29/08
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