| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of performing a good patterning which utilizes EUV light. <P>SOLUTION: The pattern forming method includes the steps of: forming a first film on a substrate to be treated; forming a second film consisting of a silicon film on the first film, which has an optical absorption factor to the EUV (Extreme Ultraviolet) light smaller than that of the first film; forming a resist film on the second film; selectively irradiating the EUV light to the resist film; and developing the resist film. <P>COPYRIGHT: (C)2009,JPO&INPIT |
