发明名称 |
SILICON INTERPOSER PRODUCING METHOD, SILICON INTERPOSER AND SEMICONDUCTOR DEVICE PACKAGE AND SEMICONDUCTOR DEVICE INCORPORATING SILICON INTERPOSER |
摘要 |
A silicon interposer producing method comprising the steps of forming through holes 12 in a silicon wafer 11, forming an oxide coating 13 on the silicon wafer 11, providing a power feeding layer 14 for plating on one of the surfaces of the through holes 12, supplying a low thermal expansion filler 15 having a thermal expansion coefficient lower than the thermal expansion coefficient of the conductive material 16 of through-hole electrodes 17 to the through holes 12, filling the conductive material 16 into the through holes 12 by plating to form the through-hole electrodes 17, and removing the power feeding layer 14 for plating.
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申请公布号 |
US2009121345(A1) |
申请公布日期 |
2009.05.14 |
申请号 |
US20080259564 |
申请日期 |
2008.10.28 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
SUNOHARA MASAHIRO |
分类号 |
H01L23/32;H01L21/00;H01L21/768;H01L23/495 |
主分类号 |
H01L23/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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