发明名称 Method for manufacturing semiconductor device
摘要 To provide a method for manufacturing a highly-reliable semiconductor device, which is not damaged by external local pressure, with a high yield, a semiconductor device is manufactured by forming an element substrate having a semiconductor element formed using a single-crystal semiconductor substrate or an SOI substrate, providing the element substrate with a fibrous body formed from an organic compound or an inorganic compound, applying a composition containing an organic resin to the element substrate and the fibrous body so that the fibrous body is impregnated with the organic resin, and heating to provide the element substrate with a sealing layer in which the fibrous body formed from an organic compound or an inorganic compound is contained.
申请公布号 EP1976000(A3) 申请公布日期 2009.05.13
申请号 EP20080004496 申请日期 2008.03.11
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 DOZEN, YOSHITAKA;SUGIYAMA, EIJI;OHTANI, HISASHI;TSURUME, TAKUYA
分类号 H01L21/77 主分类号 H01L21/77
代理机构 代理人
主权项
地址