| 发明名称 |
METHOD FOR FORMING TISIN FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl<SUB>4 </SUB>gas, a silicon hydride gas and NH<SUB>3 </SUB>gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl<SUB>4 </SUB>gas, a silicon hydride gas, H<SUB>2 </SUB>gas and N<SUB>2 </SUB>gas are used as source gases for forming a TiSiN film by the plasma CVD process. |
| 申请公布号 |
KR20090048523(A) |
申请公布日期 |
2009.05.13 |
| 申请号 |
KR20097008625 |
申请日期 |
1999.12.09 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OTSUKI HAYASHI;TADA KUNIHIRO;MATSUSE KIMIHIRO |
| 分类号 |
H01L21/205;C23C16/34;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/285;H01L21/768;H01L21/8242;H01L23/485;H01L27/108;H01L29/49 |
主分类号 |
H01L21/205 |
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