FABRICATION METHOD OF PHASE-CHANGE MEMORY DEVICE,申请号KR20070113703-传众专利搜索

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发明名称	FABRICATION METHOD OF PHASE-CHANGE MEMORY DEVICE
摘要
申请公布号	KR20090047716(A)	申请公布日期	2009.05.13
申请号	KR20070113703	申请日期	2007.11.08
申请人	HYNIX SEMICONDUCTOR INC.	发明人	LEE, KEUM BUM;CHAE, SU JIN;CHANG, HEON YONG;LEE, MIN YONG;LEE, HYUNG SUK
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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