NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

A nonvolatile memory device includes a substrate, a device isolation region disposed in the substrate and abutting a sidewall of an active region defined in the substrate, the device isolation region having a recessed portion and a word line crossing the active region and the recessed portion of the device isolation region and conforming to the sidewall adjacent the recessed portion of the device isolation region. The nonvolatile memory device may further include a sense line crossing the active region and the device isolation region parallel to the word line, the sense line overlying a portion of the device isolation region having a top surface at substantially the same level as a top surface of the active region. An edge of the active region adjacent the sidewall may be rounded.