发明名称 |
Crystal growth method |
摘要 |
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
|
申请公布号 |
US7531038(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20050302128 |
申请日期 |
2005.12.14 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;KUMANO MASAFUMI;IWATA HIROKAZU;ARAKI TAKASHI |
分类号 |
C30B13/08;C30B9/00;C30B11/00;H01L33/00;H01S5/323 |
主分类号 |
C30B13/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|