发明名称 Crystal growth method
摘要 A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
申请公布号 US7531038(B2) 申请公布日期 2009.05.12
申请号 US20050302128 申请日期 2005.12.14
申请人 RICOH COMPANY, LTD. 发明人 SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;KUMANO MASAFUMI;IWATA HIROKAZU;ARAKI TAKASHI
分类号 C30B13/08;C30B9/00;C30B11/00;H01L33/00;H01S5/323 主分类号 C30B13/08
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