| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of improving the reliability of a capacitive element, in a semiconductor device including the capacitive element. <P>SOLUTION: The capacitive element is formed on an element isolation region 11 formed over a semiconductor substrate 10. The capacitive element includes a lower electrode 16 and an upper electrode 23 formed over the lower electrode 16 through a capacitive insulating film 27. Basically, the lower electrode 16 and the upper electrode 23 are formed out of polysilicon films 14 and 20 and cobalt silicide films 33 formed over the surfaces of the polysilicon films 14 and 20, respectively. In this case, end portions of the cobalt silicide film 33 formed over the upper electrode 23 are formed to be spaced apart by a distance L1 from end portions of the upper electrode 23. Moreover, end portions of the cobalt silicide film 33 formed over the lower electrode 16 are formed to be spaced apart by a distance L2 from boundaries between the upper electrode 23 and the lower electrode 16. <P>COPYRIGHT: (C)2009,JPO&INPIT |
