III NITRIDE ELECTRONIC DEVICE AND III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE

摘要

In a III nitride heterojunction transistor (11a), a second AlY1InY2Ga1-Y1-Y2N layer (15) forms heterojunction (21) with a first AlX1InX2Ga1-X1-X2N layer (13a). A first electrode (17) forms Schottky junction with the first AlX1InX2Ga1-X1-X2N layer (13a). The first AlX1InX2Ga1-X1-X2N layer (13a) and the second AlY1InY2Ga1-Y1-Y2N layer (15) are arranged on a substrate (23). Electrodes (17a, 18a, 19a) include a source electrode, a gate electrode and a drain electrode, respectively. The carbon concentration (NC13) of the first AlX1InX2Ga1-X1-X2N layer (13a) is less than 1 x 1017cm-3. The dislocation density (D) of the second AlY1InY2Ga1-Y1-Y2N layer (15) is 1 x 108cm-2. A two-dimensional electron gas layer (25) is formed by the heterojunction (21). Thus, a low-loss gallium nitride electronic device is provided.