| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an epitaxial growth substrate which suppresses the occurrence of the warp and the crack of the epitaxial growth substrate and can reduce the manufacturing lead time, and to provide a manufacturing method of a nitride-based compound semiconductor element, an epitaxial growth substrate, and a nitride-based compound semiconductor element. <P>SOLUTION: The problem is solved by the manufacturing method of an epitaxial growth substrate comprising a step for providing a support substrate 10 which is composed of a material that forms holes on the surface by a reaction with gallium, a step for arranging in dot-like a plurality of buffer layer growth nuclei 20 which are composed of a first nitride-based compound semiconductor on the support substrate 10, a step for forming holes 12 on the upper surface of the support substrate 10 where the buffer layer growth nuclei 20 are not arranged by pouring gallium thereinto, and a step for covering over the holes 12 with a first layer 22a which comorises the same elements as the buffer layer growth nuclei 20, and a step for forming a second layer 22b which is composed of a second nitride-based compound semiconductor having a lattice constant different from the first nitride-based compound semiconductor on the first layer 22a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
