| 摘要 |
A method performed on a semiconductor chip having a doped semiconductor material abutting a substrate involves creating a first via through at least a portion of the substrate extending from an outer side of the substrate towards the doped semiconductor material, the first via having a wall surface and a bottom, introducing a first electrically conductive material into the first via so as to create an electrically conductive path, creating a second via, aligned with the first via, extending from an outer surface of the doped portion of the semiconductor chip to the bottom, and introducing a second electrically conductive material into the second via so as to create an electrically conductive path. |
