发明名称 |
Verfahren zur Eliminierung von Defekten in Kristallen |
摘要 |
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal. <IMAGE> |
申请公布号 |
DE60326792(D1) |
申请公布日期 |
2009.05.07 |
申请号 |
DE2003626792 |
申请日期 |
2003.06.25 |
申请人 |
DIAMOND INNOVATIONS INC. |
发明人 |
D'EVELYN, MARK PHILIP;ROWLAND, LARRY BURTON;LUCEK, JOHN WILLIAM;VAGARALLI, SURESH SHANKARAPPA;ANTHONY, THOMAS RICHARD;LEVINSON, LIONEL MONTY;ARTHUR, STEPHEN DALEY |
分类号 |
C30B33/02;B01J3/06;C30B1/00;C30B29/36;C30B29/40;C30B29/42;C30B33/00;H01L21/324 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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