| 发明名称 |
MULTILAYER STRUCTURE AND METHOD OF PRODUCING THE SAME |
| 摘要 |
<p>A multilayer structure, in particular a trench capacitor, is provided comprising a patterned layer structure comprising trenches, and a first electrode, wherein the patterned layer structure comprises a FASS-curve structure, and wherein at least parts of the first electrode are formed on the FASS-curve structure.</p> |
| 申请公布号 |
WO2009057010(A1) |
申请公布日期 |
2009.05.07 |
| 申请号 |
WO2008IB54302 |
申请日期 |
2008.10.20 |
| 申请人 |
NXP B.V.;TESSON, OLIVIER;LECORNEC, FRANCOIS |
发明人 |
TESSON, OLIVIER;LECORNEC, FRANCOIS |
| 分类号 |
H01L21/02;G06F17/50 |
主分类号 |
H01L21/02 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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