| 摘要 |
<p>Provided are a binary mask, a method for fabricating the binary mask, and a method for fabricating a fine pattern of semiconductor device. In the method for fabricating the fine pattern, a binary mask including phase shift layer patterns is prepared on a transparent substrate. A semiconductor substrate including an etch objective layer and a resist layer is prepared. An exposure operation using the binary mask and a light source of a short wavelength is performed to transfer the phase shift layer patterns of the binary mask onto the resist layer of the semiconductor substrate. The resist layer to which the patterns have been transferred is developed to form resist layer patterns selectively exposing the etch objective layer. Exposed portions of the etch objective layer are etched using the resist layer patterns as an etch mask to form etch objective layer patterns. The resist layer patterns are removed.</p> |
