发明名称 |
ANTIFUSE STRUCTURE AND ARRAY |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an antifuse structure and an array. <P>SOLUTION: The antifuse structure includes a bit line formed in a first diffusion region inside a substrate, an insulating layer formed on the bit line, and a word line formed on the insulating layer. A second diffusion region formed at the peripheral part of the bit line is provided further. The bit line is a region doped with a first doping substance, and the second diffusion region is a region doped with a second doping substance. Element separating films formed at both side parts of the bit line are provided further. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009099961(A) |
申请公布日期 |
2009.05.07 |
申请号 |
JP20080241697 |
申请日期 |
2008.09.19 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM DEOK-KEE;PARK YOON-DONG;LEE SEUNG-HOON;SONG I-HUN;KIM WON-JOO;JIN YOUNG-GU;CHOI HYUK-SOON;KIM SUK-PIL |
分类号 |
H01L27/10;G11C17/14;H01L21/82;H01L21/822;H01L27/04 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|