发明名称 ANTIFUSE STRUCTURE AND ARRAY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an antifuse structure and an array. <P>SOLUTION: The antifuse structure includes a bit line formed in a first diffusion region inside a substrate, an insulating layer formed on the bit line, and a word line formed on the insulating layer. A second diffusion region formed at the peripheral part of the bit line is provided further. The bit line is a region doped with a first doping substance, and the second diffusion region is a region doped with a second doping substance. Element separating films formed at both side parts of the bit line are provided further. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009099961(A) 申请公布日期 2009.05.07
申请号 JP20080241697 申请日期 2008.09.19
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM DEOK-KEE;PARK YOON-DONG;LEE SEUNG-HOON;SONG I-HUN;KIM WON-JOO;JIN YOUNG-GU;CHOI HYUK-SOON;KIM SUK-PIL
分类号 H01L27/10;G11C17/14;H01L21/82;H01L21/822;H01L27/04 主分类号 H01L27/10
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