发明名称 CONDUCTIVE PASTE MATERIAL
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a conductive paste material which has favorable ohmic contact in order to obtain high current collecting efficiency, in the conductive paste for a poly-crystal Si solar battery. <P>SOLUTION: The conductive paste material contains SiO<SB>2</SB>-B<SB>2</SB>O<SB>3</SB>-Al<SB>2</SB>O<SB>3</SB>-PbO-based low-melting point glass whose composition contains SiO<SB>2</SB>of 1-10 mass%, B<SB>2</SB>O<SB>3</SB>of 5-15 mass%, Al<SB>2</SB>O<SB>3</SB>of 1-15 mass%, PbO of 68-89 mass%, CuO of 0-10 mass%, and TiO<SB>2</SB>of 0-10 mass%. Further, the low-melting point glass has a thermal expansion coefficient of (80-110)×10<SP>-7</SP>/°C at 30°C-300°C, and has a softening point not lower than 350°C and not higher than 500°C. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009099781(A) 申请公布日期 2009.05.07
申请号 JP20070270154 申请日期 2007.10.17
申请人 CENTRAL GLASS CO LTD 发明人 HAMADA JUN;HAYAKAWA NAOYA;NAKAYA KAZUTOSHI
分类号 H01L31/04;H01B1/22 主分类号 H01L31/04
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