| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a photovoltaic element containing a silicon substrate having a p-n junction. <P>SOLUTION: The method of manufacturing a photovoltaic element containing a silicon substrate having a p-n junction includes a step of forming antireflection coating formed of amorphous silicon carbide on at least one surface of the silicon substrate by growing, by chemical vapor deposition, a composition containing a precursor selected from among a group including organic silane, aminosilane, and a mixture thereof. The antireflection coating formed of the amorphous silicon carbide is a film expressed by a formula of Si<SB>v</SB>C<SB>x</SB>N<SB>u</SB>H<SB>y</SB>F<SB>z</SB>, wherein v+x+u+y+z=100%, v is 1-35 atomic%, x is 5-80 atomic%, u is 0-50 atomic%, y is 10-50 atomic%, and z is 0-15 atomic%. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
