A PLASMA PROCESSING METHOD FOR FORMING A FILM AND AN ELECTRONIC COMPONENT MANUFACTURED BY THE METHOD
摘要
The present invention is a semiconductor device manufacturing method including the steps of forming a fluorinated insulating film, depositing a first SixCyNz film on the fluorinated insulating film by reacting a mono-methylsilane and depositing a second SixCyNz film on the first SixCyNz film by reacting a tri-methylsilane. The present invention is also a semiconductor device including a fluorinated insulating film, a first SixCyNz film deposited on the fluorinated insulating film by reacting a mono-methylsilane and a second SixCyNz film deposited on the first SixCyNz film by reacting a tri-methylsilane.
申请公布号
WO2009014741(A9)
申请公布日期
2009.05.07
申请号
WO2008US09021
申请日期
2008.07.24
申请人
TOKYO ELECTRON LIMITED;MIYATANI, KOTARO;KAWAMURA, KOHEI;NOZAWA, TOSHIHISA;MATSUOKA, TAKAAKI
