| 摘要 |
A nitride semiconductor free-standing substrate includes a surface inclined in a range of 0.03° to 1.0° from a C-plane, and an off-orientation that an angle defined between a C-axis and a tangent at each point on a whole surface of the substrate becomes maximum is displaced in a range of 0.5° to 16° from a particular M-axis orientation of six-fold symmetry M-axis orientations. The substrate does not include a region of -0.5°<phi<+0.5° on the surface, where phi represents a displacement angle of the off-orientation on a surface of the substrate from the particular M-axis orientation.
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