发明名称 Redriven/Retimed Registered Dual Inline Memory Module
摘要 A memory module may include a plurality of dynamic random access memory (DRAM) chips, each of which may have one or more data input/output (D/Q) terminals. The memory module may include data redriving/retiming circuits connected to the D/Q terminals of the plurality of DRAM chips. The data redriving/retiming circuits may provide isolation between a system memory bus and the D/Q terminals of the DRAM chips.
申请公布号 US2009119451(A1) 申请公布日期 2009.05.07
申请号 US20080267355 申请日期 2008.11.07
申请人 HAYWOOD CHRISTOPHER;RAGHAVAN GOPAL 发明人 HAYWOOD CHRISTOPHER;RAGHAVAN GOPAL
分类号 G06F12/02 主分类号 G06F12/02
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