发明名称 |
Redriven/Retimed Registered Dual Inline Memory Module |
摘要 |
A memory module may include a plurality of dynamic random access memory (DRAM) chips, each of which may have one or more data input/output (D/Q) terminals. The memory module may include data redriving/retiming circuits connected to the D/Q terminals of the plurality of DRAM chips. The data redriving/retiming circuits may provide isolation between a system memory bus and the D/Q terminals of the DRAM chips.
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申请公布号 |
US2009119451(A1) |
申请公布日期 |
2009.05.07 |
申请号 |
US20080267355 |
申请日期 |
2008.11.07 |
申请人 |
HAYWOOD CHRISTOPHER;RAGHAVAN GOPAL |
发明人 |
HAYWOOD CHRISTOPHER;RAGHAVAN GOPAL |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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