发明名称 |
Flash memory devices configured to be programmed using variable initial program loops and related devices |
摘要 |
A method of programming a nonvolatile memory device including a plurality of memory cells includes providing a plurality of program loops having a corresponding plurality of program voltages associated therewith. A first one of the plurality of program loops is activated to generate a first program voltage to program a first one of the plurality of memory cells. A second one of the plurality of program loops is activated to generate a second program voltage to program a second one of the plurality of memory cells.
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申请公布号 |
US7529134(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20060439797 |
申请日期 |
2006.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAHN WOOK-GHEE;LIM YOUNG-HO;BYEON DAE-SEOK |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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地址 |
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