| 摘要 |
Disclosed herein are new MIM structures having increased capacitance with little or no tunneling current, and related methods of manufacturing the same. In one embodiment, the new MIM structure comprises a first electrode comprising a magnetic metal and having a magnetic moment aligned in a first direction, and a second electrode comprising a magnetic metal and having a magnetic moment aligned in a second direction antiparallel to the first direction. In addition, such an MIM structure comprises a dielectric layer formed between the first and second electrodes and contacting the first and second magnetic metals.
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