SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK
摘要
<p>Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned mask layer by removing portions of the mask layer that are not covered by the patterned resist; and forming metal silicides on the memory device by a chemical reaction of a metal layer formed on the memory device with portions of the memory device that are not covered by the patterned mask layer. By preventing silicidation of underlying silicon containing layers/components of the memory device that are covered by the patterned mask layer, the methods can selectively form the metal silicides on the desired portions of the memory device.</p>
申请公布号
WO2009055384(A1)
申请公布日期
2009.04.30
申请号
WO2008US80636
申请日期
2008.10.21
申请人
SPANSION LLC;MIN, KYUNGHOON;HUI, ANGELA;KINOSHITA, HIROYUKI;CHENG, NING;CHANG, MARK
发明人
MIN, KYUNGHOON;HUI, ANGELA;KINOSHITA, HIROYUKI;CHENG, NING;CHANG, MARK