| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a display device which can achieve high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, and reduction in the area of the field-effect transistor which occupies the pixel, without depending on a microfabrication technique of the field-effect transistor constituting the pixel of the display device, even when the number of field-effect transistors in the pixel is increased. <P>SOLUTION: A display device is provided with a plurality of pixels in which a plurality of field-effect transistors including a semiconductor layer which is separated from a semiconductor substrate and is bonded to a supporting substrate having an insulating surface are stacked with a planarization layer interposed therebetween. <P>COPYRIGHT: (C)2009,JPO&INPIT |
