发明名称 Exposure method and system
摘要 An exposure method and an exposure apparatus make it possible to easily supply a gas through which an exposure light beam is transmitted, to a space between a projection optical system and a substrate. A wafer is exposed with an image of a pattern on a reticle by radiating the exposure light beam having passed through the pattern on the reticle, onto the wafer via a projection optical system. A purge guide plate, which has a guide hole, is installed between the wafer and an optical member disposed at the tip of the projection optical system. A purge gas, through which the exposure light beam is transmitted, is supplied to the space between the wafer and the optical member. The purge gas flows through the guide hole toward the wafer, and then flows in directions toward the outer circumference.
申请公布号 US6970228(B1) 申请公布日期 2005.11.29
申请号 US20020030822 申请日期 2002.01.16
申请人 NIKON CORPORATION 发明人 AOKI TAKASHI;OWA SOICHI
分类号 G03F7/20;(IPC1-7):G03B27/42;G03B27/52 主分类号 G03F7/20
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