发明名称 |
MULTIPLE CRYSTALLOGRAPHIC ORIENTATION SEMICONDUCTOR STRUCTURES |
摘要 |
A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may comprise a performance sensitive logic device and the second device may comprise a yield sensitive memory device. An additional semiconductor structure includes a further laterally adjacent second semiconductor-on-insulator surface semiconductor layer having the first polarity and the second crystallographic orientation, and absent edge defects, to accommodate yield sensitive devices.
|
申请公布号 |
US2009108302(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20070931209 |
申请日期 |
2007.10.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NARASIMHA SHREESH;AGNELLO PAUL DAVID;CHEN XIAOMENG;HOLT JUDSON R.;KHARE MUKESH VIJAY;KIM BYEONG Y.;SADANA DEVANDRA K. |
分类号 |
H01L27/112;H01L21/82 |
主分类号 |
H01L27/112 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|