| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a silicon ingot, which relates to a semiconductor fabrication process and prevents flaking of inner surface of a quartz crucible without an additional process. SOLUTION: The method for growing the silicon ingot comprises; a step S210 of charging silicon in the quartz crucible; a step S230 of heating the quartz crucible; a step S240 of applying a magnetic field of≥500 gauss in the quartz crucible to melt S250 the charged silicon; and a step S260 of applying the magnetic field of <500 gauss in the quartz crucible to grow S270 a single crystalline silicon ingot from the melted silicon or the step S210 of charging silicon in the quartz crucible; a step S220 of keeping the pressure in the quartz crucible under the first pressure of 50-400 torr; the step S230 of melting the charged silicon by heating the quartz crucible; the step S220 of keeping the pressure in the quartz crucible under the second pressure of 50-400 torr to grow S270 the single crystalline silicon ingot from the melted silicon. COPYRIGHT: (C)2009,JPO&INPIT
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