| 摘要 |
A method of fabricating a semiconductor device includes providing a semiconductor substrate including a first landing plug and a second landing plug. A bit line is formed over the semiconductor substrate. The bit line is electrically coupled to the first landing plug. A stacked structure of an etch stop film and an interlayer insulating film is deposited over the semiconductor substrate including the bit line. The stacked structure is selectively etched using a contact mask to form a contact hole having an upper part that is wider than a lower part of the contact hole. The contact hole exposes the second landing plug. A contact plug is formed over the contact hole. The contact plug is electrically coupled to the second landing plug.
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