| 摘要 |
<p>A method for forming a micro pattern of a semiconductor device is provided to form a first and a second exposure region having a pitch smaller than a limit resolution of an exposure device on a first photoresist film and a second photoresist film by forming the first photoresist film and the second photoresist film into a laminate structure. A first photoresist film and a second photoresist film having a different exposure type are formed on a semiconductor substrate(100) on which a film to be etched is formed. An exposure process is performed about the first photoresist film and the second photoresist film. A second photoresist pattern is formed by developing the second photoresist film. A first photoresist pattern is formed by etching the first photoresist film with the second photoresist pattern as an etching mask. An assist pattern is formed by developing the first photoresist pattern. The film to be etched is etched by using the assist pattern.</p> |
