发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 A semiconductor memory device including: a package; a first semiconductor chip provided in the package; a first nonvolatile memory provided on the first semiconductor chip; a second semiconductor chip provided in the package; a second nonvolatile memory provided on the second semiconductor chip; a system bus provided in the package, the system bus connecting the first and second nonvolatile memories; a plurality of data terminals exposed to outside of the package, the data terminals being connected to the first and second nonvolatile memories through the system bus; and an enable terminal exposed to the outside of the package, the enable terminal being connected to the first and second nonvolatile memories.
申请公布号 US2009109753(A1) 申请公布日期 2009.04.30
申请号 US20080339879 申请日期 2008.12.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUJITA NORIHIRO;NAGASHIMA HIROYUKI;NAKAMURA HIROSHI
分类号 G11C7/10;G11C7/22;G11C11/34 主分类号 G11C7/10
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