发明名称 Hocheffizientes, beidseitig gekühltes diskretes Leistungsschaltungsgehäuse, insbesondere Basiselement für innovative Leistungsschaltungsmodule
摘要 Two DBC wafers have patterned first conductive surfaces which receive a semiconductor die in sandwich fashion. Lead frame terminally extending into the package interior and are connected to the die terminals. The outer conductive surfaces of each of the wafers are available for two-sided cooling of the semiconductor.
申请公布号 DE112007001249(T5) 申请公布日期 2009.04.30
申请号 DE20071101249T 申请日期 2007.05.23
申请人 INTERNATIONAL RECTIFIER CORP. 发明人 HAUENSSTEIN, HENNING M.
分类号 H01L23/52;H01L29/40 主分类号 H01L23/52
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